元器件交易网关于LMLM5111-1MX/NOPB相关英文资料详解

<strong>　　General Description

　　The LM5111-1MX/NOPB (购买请点击) Dual Gate Driver replaces industry standardgate drivers with improved  efficiency.Each “compound” output driver stage includes MOSand bipolar transistors operating in parallel that together sinkmore than 5A peak from capacitive loads. Combining theunique characteristics of MOS and bipolar devices reducesdrive current variation with voltage and temperature. Unelockout protection is also provided. The drivers canbe operated in parallel with inputs and outputs connected todouble the drive current capability. This device is available inthe SOIC-8 packageLM5111-1MX/NOPB (购买请点击).

　　Features

　　Independently drives two N-Channel MOSFETs;

　　Compound CMOS and bipolar outputs reduce outputcurrent variation;

　　5A sink/3A source current capabilitTwo channels can be connected in parallel to double thdrive currentIndependent inputs (TTL compatible);

　　Fast propagation times (25 ns typical)LM5111-1MX/NOPB (购买请点击);

　　Fast rise and fall times (14 ns/12 ns rise/fall with 2 nFload);

　　Available in dual non-inverting, dual inverting andLM5111-1MX/NOPB (购买请点击);

　　combination configurations;

　　Supply rail under-voltage lockout protectionLM5111-1MX/NOPB (购买请点击);

　　Pin compatible with industry standard gate drivers。