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  Silicon Controlled Rectifiers Reverse Blocking Thyristors:

  Designed primarily for half−wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed.

  NSEMI MCR16N Features:

  Blocking Voltage to 800 Volts

  On−State Current Rating of 16 Amperes RMS

  High Surge Current Capability − 160 Amperes

  Rugged Economical TO−220AB Package

  Glass Passivated Junctions for Reliability and Uniformity

  Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design

  High Immunity to dv/dt − 100 V/sec Minimum at 125°C

  Pb−Free Package is Available

  MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

  Maximum ratings are those values beyond which device damage can occur.

  Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,damage may occur and reliability may be affected.

  1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

  For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

  MCR16N PACKAGE DIMENSIONS

  TO−220AB CASE 221A−09 ISSUE AA

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