Voltage Supply
1.65V ~ 1.95V
2.70V ~ 3.60V
Organization
Memory Cell Array : (256M + 8M) x 8bit
Data Register : (2K + 64) x 8bit
Automatic Program and Erase
Page Program : (2K + 64)Byte
Block Erase : (128K + 4K)Byte
Page Read Operation
Page Size : (2K + 64)Byte
Random Read : 25µs(Max.)
Serial Access : 25ns(Min.)
(*K9F2G08R0A: tRC = 42ns(Min))
K9F2G08UOA-PCBO GENERAL DESCRIPTION
Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Bytepage and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as com-mand input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0A′s extended reli-ability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
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